Co-integration of sensors with their linked electronics on a unmarried silicon chip may supply many major merits relating to functionality, reliability, miniaturization and procedure simplicity with no considerably expanding the whole cost.
Micromachined Thin-Film Sensors for SOI-CMOS Co-integration covers the demanding situations and pursuits and demonstrates the winning co-integration of gas-flow sensors on dielectric membrane, with their linked electronics, in CMOS-SOI technology.
We first of all examine the extraction of residual pressure in skinny layers and of their stacking and the discharge, in post-processing, of a 1 µm-thick powerful and flat dielectric multilayered membrane utilizing Tetramethyl Ammonium Hydroxide (TMAH) silicon micromachining resolution. The optimization of its selectivity in the direction of aluminum is basically demonstrated.
The moment half makes a speciality of sensors layout and features. a singular loop-shape polysilicon microheater is designed and in-built a CMOS-SOI typical method. excessive thermal uniformity, low strength intake and excessive operating temperature are proven through wide measurements. the extra gasoline circulate sensing layers are judiciously selected and carried out. Measurements within the presence of a nitrogen stream and fuel show reasonable sensitivity on a wide circulate speed diversity in addition to strong reaction to many gases. ultimately, MOS transistors suspended on published dielectric membranes are provided and entirely characterised as a concluding demonstrator of the co-integration in SOI technology.